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制造商: Toshiba
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: SMD/SMT
封装 / 箱体: DSOP-8
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 100 V
Id-连续漏极电流: 150 A
Rds On-漏源导通电阻: 3.7 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 1.5 V
Qg-栅极电荷: 67 nC
最小工作温度: - 55 C
最大工作温度: + 175 C
Pd-功率耗散: 170 W
通道模式: Enhancement
商标名: U-MOSIX-H
封装: Cut Tape
封装: MouseReel
封装: Reel
配置: Single
系列: TPW3R70APL
晶体管类型: 1 N-Channel
商标: Toshiba
下降时间: 19 ns
产品类型: MOSFET
上升时间: 10 ns
工厂包装数量: 5000
子类别: MOSFETs
典型关闭延迟时间: 68 ns
典型接通延迟时间: 21 ns
单位重量: 104 mg
U-MOSIX-H MOSFETs
Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
产品广泛应用于工业自动化，医疗设备，电机控制，光模块，电源系统，仪器仪表，智能家居，电网自动化，通信，汽车电子等。
本公司整合100万条现货库存，所有库存均可在线报价 极速发货， 国外交货最快3-5个工作日，国内当天发货！解决中小企业一键BOM配单，撮合交易。