NTR4003NT1G

时间：2022-05-16 17:36发布企业：深圳市鼎信佳电子科技有限公司

联系人：l罗先生,黄先生电话：13422891902Q Q：

型号： NTR4003NT1G
品牌： onsemi(安森美)
封装： SOT-23(SOT-23-3)
描述：类型：N沟道漏源电压(Vdss)：30V 连续漏极电流(Id)：500mA 功率(Pd)：690mW 导通电阻(RDS(on)@Vgs,Id)：阈值电压(Vgs(th)@Id)： N沟道,30V,0.56A,1Ω@4VNTR4003N, NVR4003N MOSFET – Single, N-Channel, Small Signal, SOT-23 30 V, 0.56 A Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Notebooks: ♦ Level Shifters ♦ Logic Switches ♦ Low Side Load Switches • Portable Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID 0.5 A TA = 85°C 0.37 Power Dissipation (Note 1) Steady State PD 0.69 W Continuous Drain Current (Note 1) t < 10 s TA = 25°C ID 0.56 A TA = 85°C 0.40 Power Dissipation (Note 1) t < 5 s PD 0.83 W Pulsed Drain Current tp = 10 s IDM 1.7 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 3 2 Device Package Shipping† ORDERING INFORMATION 30 V 1.5 @ 2.5 V 1.0 @ 4.0 V RDS(on) TYP 0.56 A V(BR)DSS ID MAX SOT−23

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