技术参数
针脚数8漏源极电阻0.008 Ω极性N-Channel耗散功率46 W阈值电压2 V漏源极电压(Vds)60 V上升时间50 ns输入电容(Ciss)880pF @25V(Vds)下降时间3 ns工作温度(Max)175 ℃工作温度(Min)-55 ℃耗散功率(Max)46 W
封装参数
安装方式Surface Mount引脚数8封装WDFN-8
外形尺寸
长度3.15 mm宽度3.15 mm高度0.75 mm封装WDFN-8
物理参数
工作温度-55℃ ~ 175℃ (TJ)
其他
产品生命周期Active包装方式Tape & Reel (TR)
符合标准
RoHS标准RoHS Compliant含铅标准Lead FreeREACH SVHC版本2016/06/20
NTTFS5C673NL
Power MOSFET
60 V, 9.3 m
W
, 50 A, Single N−Channel
Features
•
Small Footprint (3.3x3.3 mm) for Compact Design
•
Low R
DS(on)
to Minimize Conduction Losses
•
Low Q
G
and Capacitance to Minimize Driver Losses
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source V
oltage
V
DSS
60
V
Gate−to−Source V
oltage
V
GS
±
20
V
Continuous Drain
Current R
q
JC
(Notes 1, 3)
Steady
State
T
C
= 25
°
C
I
D
50
A
T
C
= 100
°
C
35
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25
°
C
P
D
46
W
T
C
= 100
°
C
23
Continuous Drain
Current R
q
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25
°
C
I
D
13
A
T
A
= 100
°
C
9
Power Dissipation
R
q
JA
(Notes 1 & 2)
T
A
= 25
°
C
P
D
3.1
W
T
A
= 100
°
C
1.6
Pulsed Drain Current
T
A
= 25
°
C, t
p
= 10
m
s
I
DM
290
A
Operating Junction and Storage Temperature
T
J
, T
stg
− 55 to
+175
°
C
Source Current (Body Diode)
I
S
52
A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 2.3 A)
E
AS
88
mJ
Lead Temperature for Soldering Purposes
(1/8
′′
from case for 10 s)
T
L
260
°
C
Stresses
exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
q
JC
3.2
°
C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board
using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.
onsemi.com
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
60 V
9.3 m
W
@ 10 V
50 A
13.3 m
W
@ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
See detailed ordering, marking and shipping information in the
package dimensions section on page
5 of this data sheet.
ORDERING INFORMATION
WDFN8
(
m
8FL)
CASE 511AB
1
1
673L
AYWW
G
G
D
D
D
D
S
S
S
G
(Note: Microdot may be in either location)
673L
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package