制造商: STMicroelectronics
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 60 V
Id-连续漏极电流: 16 A
Rds On-漏源导通电阻: 100 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 2 V
Qg-栅极电荷: 10 nC
最小工作温度: - 55 C
最大工作温度: + 175 C
Pd-功率耗散: 45 W
通道模式: Enhancement
商标名: STripFET
系列: STP16NF06
封装: Tube
商标: STMicroelectronics
配置: Single
下降时间: 6 ns
高度: 9.15 mm
长度: 10.4 mm
产品类型: MOSFET
上升时间: 18 ns
1000
子类别: MOSFETs
晶体管类型: 1 N-Channel
类型: MOSFET
典型关闭延迟时间: 17 ns
典型接通延迟时间: 7 ns
宽度: 4.6 mm
单位重量: 2 g
STP16NF06 STP16NF06FP N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET
General features ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.