BM840F12B34U2
SiC Power Module
VDSS = 1200V 
ID nom
= 500A
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 1 of 12
General Description
BYD SiC Power Module BM840F12B34U2 provides
low switching, which introduce the advanced SiC
MOSFET chip, it is able to take on a perfect performance
in various applications with switching frequencies in the
range of 1-30KHz.
概述
比亚迪碳化硅功率模块BM840F12B34U2提供低损和
高短路能力,内含先进的碳化硅MOSFET芯片,在1-30KHZ
频率的应用中表现出优良的性能。
Key Features
The 3rd Generation Semiconductor Material-Silicon
Carbide
Blocking Voltage 1200V
Low RDS（on）
Low Switching Losses
Low Qg and Cres
Low Inductive Design≤15nH
Ag Sintering
Tvj op=175ºC
Direct Cooled Cu PinFin Base Plate
High Performance Si3N4 Ceramic
Integrated NTC Temperature Sensor
Applications
Automotive Application
AC Motor Control
Motion/Servo Control
Maximum applied voltage platform: 750V
关键特性
第三代半导体材料-碳化硅
阻断电压 1200V
低 RDS(on)
低开关损耗
低 Qg和 Crss
低电感设计≤15nH
银烧结工艺
最大工作结温 175 ℃
直接冷却底板
高性能氮化硅陶瓷
集成化 NTC 温度传感器
应用
汽车级应用
电动车/混动车
电机驱动
最高支持750V电压平台
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 2 of 12
Characteristic Values
Absolute Maximum Ratings/最大额定值
MOSFET Characteristics/MOSFET 特性
Parameter
Symbol
Conditions
Temperature
Value
Unit
Drain-source Voltage
漏极－源极电压
VDSS
-
Tvj=25℃
1200
V
DC Drain Current
连续漏极直流电流
ID nom
VGS=18V
Tvj=175℃,
TF=65℃
500
A
Pulsed Drain Current,tp Limited By
Tjmax 脉冲漏极电流
ID pulse
-
-
1680
A
Maximum transient Gate-source Voltage
栅极电压
VGS
10 hours over
lifetime
Tpulse＜1μs
-
-11/+23
V
Gate-source Voltage,Maximum Value
栅极电压
VGSmax
-
-
-5.5/+20
V
Gate-source Voltage
栅极电压
VGSop
-
-
-5/+18
V
Total Power Dissipation
耗散功率
Ptot
-
TF = 65℃
Tvj=175℃
1100
W
Parameter
Symbol
Conditions
Temperature
Min.
Typ.
Max.
Unit
Drain-source On Resistance
漏极－源极内阻
RDS(on)
VGS=18V,ID=360A
Tvj=25℃
-
2.3
3.8
mΩ
VGS=18V,ID=360A
Tvj=175℃
-
5.5
-
mΩ
Drain-source Breakdown Voltage
漏极－源极击穿电压
V(BR)DSS
VGS=0V,ID=1mA
-
1200
-
-
V
Gate Threshold Voltage
栅极阈值电压
VGS(th)
ID=6mA,VDS=VGS
Tvj=25℃
2.1
3.2
4.5
V
Gate to Source Charge 门极对源极电量
Qgs
VDS=850V,
VGS=-5V to 18V,
ID=780A
-
-
402
-
nC
Gate to Drain Charge 门极对漏极电量
Qgd
-
-
216
-
nC
Total Gate Charge 门极总电量
Qg
-
-
1032
-
nC
Internal gate resistor 内部栅极电阻
RGint
f = 1MHz
Tj = 25°C
-
-
1.88
-
Ω
Input Capacitance 输入电容
Ciss
VDS=850V,VGS=0V
,
f=1MHz
-
-
4000
-
pF
Output Capacitance 输出电容
Coss
-
-
230
pF
Reverse Transfer Capacitance
反向传输电容
Crss
-
-
22
-
pF
Gate-source Leakage Current
栅极-源极漏电流
IGSS
VGS=20V
Tvj=25℃
-
2
100
nA
Zero Gate Voltage Dranin Current
漏极-源极漏电流
IDSS
VDS=1200V
Tvj=25℃
-
1
150
uA
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 3 of 12
Body doide/ 体二极管特征值
Parameter
Symbol
Conditions
Temperature
Min.
Typ.
Max.
Unit
Turn-on Delay Time, Inductive Load
开通延迟时间
td(on)
VDS=600V
IDS=500A,
RGon=2.5Ω,
RGoff=10Ω
VG=-4V/+18V
LS=30nH
Tvj=25℃
-
71
-
ns
Tvj=150℃
-
63
-
ns
Tvj=175℃
tbd
-
-
Rise Time, inductive load
上升时间
tr
Tvj=25℃
-
46
-
ns
Tvj=150℃
-
40
-
ns
Tvj=175℃
-
tbd
-
-
Turn-Off Delay Time, Inductive Load
关断延迟时间
td(off)
Tvj=25℃
-
547
-
ns
Tvj=150℃
-
615
-
ns
Tvj=175℃
-
tbd
-
-
Fall Time, Inductive Load
下降时间
tf
Tvj=25℃
-
68
-
ns
Tvj=150℃
-
82
-
ns
Tvj=175℃
-
tbd
-
-
Energy Dissipation During Turn-on Time
开通损耗
Eon
Tvj=25℃
-
14
-
mJ
Tvj=150℃
-
10
-
mJ
Tvj=175℃
-
tbd
-
-
Energy Dissipation During Turn-off Time
关断损耗
Eoff
Tvj=25℃
-
27
-
mJ
Tvj=150℃
-
28
-
mJ
Tvj=175℃
-
tbd
-
-
Parameter
Symbol
Conditions
Temperature
Min.
Typ.
Max.
Unit
Forward Voltage
反向电压
VSD
ISD=840A
Tvj=25℃
-
4.6
5.6
V
ISD=600A
Tvj=25℃
1
3.4
5
V
Peak Reverse Recovery Current
反向恢复峰值电流
Irrm
VGS=-4V/18V,
ISD=500A,
V=600V,
di/dt=19000A/us
Tvj =150℃
-
263
-
A
Recovered Charge
反向恢复电荷
Qrr
-
13
-
nC
Reverse Recover Time
反向恢复时间
trr
-
82
-
ns
Reverse Recovery Energy
反向恢复损耗
Err
VGS=-4V/18V,
ISD=500A,
V=600V,
di/dt=19000A/us
Tvj=25℃
2.1
-
mJ
Tvj=150℃
3.6
-
mJ
Tvj=175℃
tbd
-
mJ
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 4 of 12
Thermal-Mechanical Specifications 热阻
Module Characteristics/ 模块特性
NTC-Thermistor Characteristic Values/ 热敏电阻特性
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Thermal Resistance Junction To
Coolant 结到冷却介质热阻
Rth(j-f)
8L/min;50%乙二醇，50%水
-
0.1
-
K/W
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Dimensions 尺寸
L x W x
H
Typical , See Outline Drawing
154.5×126.5×29.5
mm
Isolation Test Voltage 绝缘耐压
VisoL
t=1min,f=50HZ
3.8
kV
Clearance Distance In Air
空气间隙
da
According To IEC
60664-1 And EN
50124-1
Term. To Base
4.5
-
-
mm
Term. To Term
4.5
-
-
mm
Surface Creepage Distance
爬电距离
ds
According To IEC
60664-1and EN
50124-1
Term. To Base
9
-
-
mm
Term. To Term
9
-
-
mm
Mass 重量
m
-
-
-
662
-
g
Pressure Drop In Cooling Circuit
冷却循环中的压差
△P
△v /△t=12L/min，T=25℃ ,Cooling
Fluid=50% Water/50% Ethylenglycol
-
10
-
KPa
Maximum Pressure In Cooling Circuit
冷却循环中的最大压力
P
-
-
250
-
KPa
Stray Inductance Module 杂散电感
Lsce
-
-
-
15
nH
Mounting Torque For Modul Mounting
模块的安装扭距
M
Screw M4-baseplate to heatsink
Screw EJOT Delta PT
WN5451 25x10 PCB to frame
1.8
0.45
2.0
0.5
2.5
0.55
N·m
Terminal Connection Torque
端子连接扭矩
M
Screw M5-terminal to terminal
3.0
-
6.0
N·m
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Rated Resistance 额定阻值
R25
TC=25℃
-
5.0
-
KΩ
Deviation Of R100 R100 偏差
△R/R
TC=100℃，R100=493Ω
-5
-
5
%
Power Dissipation 耗散功率
P25
TC=25℃
-
-
20.0
mW
B-value B-值
B25/50
R2=R25exp[B25/50(1/T2-1/(298.15K))]
-
3375
-
K
B-value B-值
B25/80
R2=R25exp[B25/80(1/T2-1/(298.15K))]
-
3411
-
K
B-value B-值
B25/100
R2=R25exp[B25/100(1/T2-1/(298.15K))]
-
3433
-
K
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 5 of 12
Characteristics Diagrams/特性曲线
Fig.1 Output Characteristic MOSFET (typical)(Tvj=25℃)
图1：MOSFET输出特性(Tvj=25℃)
Fig.2 Output Characteristic MOSFET (typical)(Tvj=150℃)
图2：MOSFET输出特性(Tvj=150℃)
Fig.3 Output Characteristic MOSFET (typical)(Tvj=175℃)
图3：MOSFET输出特性(Tvj=175℃)
Fig.4 Drain-source On Resistance vs. Junction Temperature
图 4：漏极－源极内阻与温度的关系
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 6 of 12
Fig.5 Gate Threshold Voltage vs. Junction Temperature
图5：栅极阈值电压与温度的关系
Fig.6 Typ. Transfer Characteristics
图6：传输特性
Fig.7 3rd Quadrant Characteristics(Tvj=25℃)
图 7：第三象限特性(Tvj=25℃)
Fig.8 3rd Quadrant Characteristics(Tvj=150℃)
图 8：第三象限特性(Tvj=150℃)
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 7 of 12
Fig.9 3rd Quadrant Characteristics(Tvj=175℃)
图 9：第三象限特性(Tvj=175℃)
Fig.10: Switching Loss vs. Drain Current(Tvj=25℃)
图10：开关损耗与漏极电流的关系(Tvj=25℃)
Fig.11 Switching Loss vs. Drain Current(Tvj=150℃)
图 11：开关损耗与漏极电流的关系(Tvj=150℃)
Fig.12 Switching Loss vs. Gate Resistor(Tvj=25℃)
图12：开关损耗与门极电阻关系(Tvj=25℃)
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 8 of 12
Fig.13 Switching Loss vs. Gate Resistor(Tvj=150℃)
图13：开关损耗与门极电阻关系(Tvj=150℃)
Fig.14 Switching Loss vs. Gate Resistor(Tvj=175℃)
图14：开关损耗与门极电阻关系(Tvj=175℃)
Fig.14 Switching Times vs. Gate Resistor (Tvj=25℃)
图14：开关时间与门极电阻关系(Tvj=25℃)
Fig.16 Switching Times vs. Gate Resistor(Tvj=150℃)
图16：开关时间与门极电阻关系(Tvj=150℃)
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 9 of 12
Fig.17 Switching Times vs. Gate Resistor(Tvj=175℃)
图17：开关时间与门极电阻关系(Tvj=175℃)
Fig.18 Typ.transient thermal impedance ( MOSFET)
图18：瞬态热阻抗(MOSFET)
Fig.19 Typ. NTC-Temperature Characteristics
图19：NTC 热特性
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 10 of 12
Circuit Diagram/接线图
Package Outlines/封装尺寸BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 11 of 12
Attention
Correct and Safety Use of Power Module
Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules.
Please pay attention to the following descriptions and use BYD's IGBT modules according to the guidance.
During Transit:
• Tossing or dropping of a carton may damage devices inside.
• If a device gets wet with water, malfunctioning and failure may result. Special care should be taken during rain or snow to
prevent the devices from getting wet.
Storage:
• The temperature and humidity of the storage place should be 5~35°C and 45~75% respectively. The performance and
reliability of devices may be jeopardized if devices are stored in an environment far above or below the range indicated above.
Prolonged Storage:
• When storing devices more than one year, dehumidifying measures should be provided for the storage place. When using
devices after a long period of storage, make sure to check the exterior of the devices is free from scratches, dirt, rust, and so
on.
Operating Environment:
• Devices should not be exposed to water, organic solvents, corrosive gases, explosive gases, fine particles, or corrosive
agents, since any of those can lead to a serious accident.
Anti-electrostatic Measures:
• Following precautions should be taken for gated devices to prevent static buildup which could damage the devices.
(1) Precautions against the device rupture caused by static electricity
Static electricity of human bodies and cartons and/or excessive voltage applied across the gate to emitter may damage and
rupture devices. Sense-emitter and temperature-sensor are also vulnerable to excessive voltage. The basis of anti-electrostatic
is suppression of build-up and quick dissipation of the charged electricity.
* Containers that are susceptible to static electricity should not be used for transit or for storage.
* Signal terminals to emitter should be always shorted with a carbon cloth or the like until right before a module is used. Never
touch the signal terminals with bare hands.
* Always ground the equipment and your body during installation (after removing a carbon cloth or the like. It is advisable to
cover the workstation and its surrounding floor with conductive mats and ground them.
* Use soldering irons with grounded tips.
BYD Semiconductor Company Limited exerts the greatest possible effort to ensure high quality and reliability.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BYD products, to comply with the standards of
safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction
prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure
that BYD products are used within specified operating ranges as set forth in the most recent BYD products specifications.
BM840F12B34U2
Datasheet
WI-D06F08-H-0242 Rev.A/1
Page 12 of 12
警示
功率模块安全正确的使用方法：
不当的操作（如电应力、机械应力等）可能导致模块损毁。请注意以下介绍，并根据指导来使用使用比亚迪IGBT模块。
运输过程中：
• 包装箱颠簸或坠落可能导致内部器件损毁。
• 器件遇水受潮将导致故障失效。在雨雪天气尤其要注意保护器件防止淋湿。
贮存：
• 贮存地点温度与湿度应分别控制在5~35°C和45~75%。如果贮存环境远高于或低于指示的变化范围，将危害器件的性能与可靠
性。
长期贮存：
• 当存储器件时间超过一年，贮存地点应当采取去湿措施。器件经过长期存放使用时，检查器件确保外观没有刮伤，灰尘，锈迹
等。
应用环境：
• 器件不应当暴露在水，有机溶剂，腐蚀性气体、易燃易爆性气体，微尘，腐蚀性药剂中，上述任何一种情况都会导致严重事故。
防静电措施：
•带栅极器件应采取以下预警来防止可以损毁器件的静电生成。
(1) 预防措施可以防止静电击穿器件。
*门极与发射极间产生的人体静电、包装箱静电和过电压将损毁或击穿器件。采样发射极和温度传感器同样容易受到过压损毁。
防静电底板可以抑制电荷生成并快速耗散。
* 不要用易受静电影响的容器运输或贮存器件。
* 发射极信号端子应一直用碳纤维布或类似物短接直到模块使用前。任何情况下不要徒手碰触信号端子。
*安装过程中始终保持设备和你的身体接地(移除碳纤维布或类似物后)。用导电垫覆盖工作地点及周围地板并使其接地。
* 使用接地的烙铁头。
比亚迪半导体股份有限公司（简称BYD）致力于产品的高性能和高可靠性.然而,半导体器件一般会因为其固有的对电荷敏感
性和易受物理应力损坏的特点，而发生故障和失效.当用户购买BYD的产品时,用户有责任按照安全标准来为整个系统做出安全的
设计来防止任何事故，火灾或继而引起的危害公共安全，包括设计的冗余,防火措施,故障预防。请改善您的设计,确保BYD的产品
在额定范围内使用并参考最新的BYD产品规格书。