制造商: Vishay
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: SMD/SMT
封装 / 箱体: SOIC-8
商标名: TrenchFET
系列: SI4
封装: Reel
封装: Cut Tape
商标: Vishay / Siliconix
高度: 1.75 mm
长度: 4.9 mm
产品类型: MOSFET
2500
子类别: MOSFETs
宽度: 3.9 mm
零件号别名: SI4966DY-E3
单位重量: 187 mg
SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 7.1 A 0.019 0.025 Ω VGS = 2.5 V, ID = 6.0 A 0.025 0.035 Forward Transconductancea gfs VDS = 10 V, ID = 7.1 A 27 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 25 50 Gate-Source Charge Qgs 6.5 nC Gate-Drain Charge Qgd 4 Gate Resistance Rg f = 1 MHz 1.6 2.7 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 40 60 ns Rise Time tr 40 60 Turn-Off Delay Time td(off) 90 150 Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 40 80