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VISHAY/威世 SI4966DY-T1-E3 晶体管 封装SOP8 全新原装 价格优势

时间:2023-07-17 12:12发布企业:深圳和润天下电子科技有限公司
联系人:蔡经理,张小姐电话:13378422395Q Q:

制造商: Vishay 
产品种类: MOSFET 
RoHS:  详细信息 
技术: Si 
安装风格: SMD/SMT 
封装 / 箱体: SOIC-8 
商标名: TrenchFET 
系列: SI4 
封装: Reel 
封装: Cut Tape 
商标: Vishay / Siliconix 
高度: 1.75 mm 
长度: 4.9 mm 
产品类型: MOSFET 
2500 
子类别: MOSFETs 
宽度: 3.9 mm 
零件号别名: SI4966DY-E3 
单位重量: 187 mg

SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 7.1 A 0.019 0.025 Ω VGS = 2.5 V, ID = 6.0 A 0.025 0.035 Forward Transconductancea gfs VDS = 10 V, ID = 7.1 A 27 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 25 50 Gate-Source Charge Qgs 6.5 nC Gate-Drain Charge Qgd 4 Gate Resistance Rg f = 1 MHz 1.6 2.7 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 40 60 ns Rise Time tr 40 60 Turn-Off Delay Time td(off) 90 150 Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 40 80