制造商: onsemi
产品种类: MOSFET
技术: Si
安装风格: SMD/SMT
封装 / 箱体: WDFN-8
晶体管极性: P-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 12 V
Id-连续漏极电流: 5.47 A
Rds On-漏源导通电阻: 32 mOhms
Vgs - 栅极-源极电压: - 8 V, + 8 V
Qg-栅极电荷: 13 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 1.46 W
通道模式: Enhancement
商标: onsemi
配置: Single
下降时间: 17.5 ns
正向跨导 - 最小值: 5.9 S
高度: 0.75 mm
长度: 3 mm
产品: MOSFET Small Signal
产品类型: MOSFET
上升时间: 17.5 ns
子类别: MOSFETs
晶体管类型: 1 P-Channel
典型关闭延迟时间: 80 ns
典型接通延迟时间: 8 ns
宽度: 3 mm
This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics. Features • High Performance Power MOSFET • Single Low Vce(sat) Transistor as Charging Power Mux • 3.0x3.0x0.8 mm WDFN Package • Independent Pin−out Provides Circuit Flexibility • Low Profile (<0.8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device Applications • Main Switch and Battery Charging Mux for Portable Electronics • Optimized for Commercial PMUs from Top Suppliers (See Figure 2)