型号:2N7002 BK
厂商:Central Semiconductor
大小:629.77 Kbytes
页数:共4页
功能:MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
型号:2N7002 BK PBFREE
厂商:Central Semiconductor Corp
大小:628.85 Kbytes
功能:MOSFET N-CH 60V 0.115A SOT-23
功能:MOSFET N-CH 60V 115MA SOT23
型号:2N7002 H6327
厂商:Infineon Technologies
大小:253.13 Kbytes
页数:共9页
功能:MOSFET N-Ch 60V 300mA SOT-23-3
型号:2N7002 TR
功能:MOSFET N-Ch 60V .2A
型号:2N7002 TR PBFREE
型号:2N7002 TR13
型号:2N7002 TR13 PBFREE
型号:2N7002(丝印12W)
厂商:SHIKUES(时科)
大小:345.47 Kbytes
页数:共6页
功能:连续漏极电流(Id)(25°C 时):430mA 漏源电压(Vdss):60V 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:3Ω @ 400mA,10V 最大功率耗散(Ta=25°C):830mW 类型:N沟道
型号:2N7002,215
厂商:Nexperia
大小:781.53 Kbytes
页数:共13页
功能:MOSFET N-CH TRNCH 60V 300MA
厂商:Nexperia USA Inc.
大小:850.87 Kbytes
功能:MOSFET N-CH 60V 300MA TO236AB
厂商:Nexperia(安世)
大小:153.13 Kbytes
功能:连续漏极电流(Id)(25°C 时):300mA 漏源电压(Vdss):60V 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:5Ω @ 500mA,10V 最大功率耗散(Ta=25°C):830mW 类型:N沟道
型号:2N7002,235
功能:MOSFET 2N7002/TO-236AB/REEL 11" Q3/T4
功能:
型号:2N7002/HAMR
型号:2N7002/S711215
厂商:NXP USA Inc.
大小:169.19 Kbytes
页数:共8页
功能:N-CHANNEL SMALL SIGNAL MOSFET
型号:2N7002/S711R
功能:Transistor MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R
型号:2N7002@215
厂商:NEXPERIA
功能:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R
型号:2N7002_
厂商:DIODES[Diodes Incorporated]
大小:237.13 Kbytes
功能:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
型号:2N7002_04
厂商:PANJIT[Pan Jit International Inc.]
大小:89.79 Kbytes
页数:共3页
型号:2N7002_07
厂商:SUTEX[Supertex, Inc]
大小:546.81 Kbytes
页数:共5页
功能:N-Channel Enhancement-Mode Vertical DMOS FETs
大小:163.04 Kbytes
功能:60V N-Channel Enhancement Mode MOSFET
型号:2N7002_08
厂商:BILIN[Galaxy Semi-Conductor Holdings Limited]
大小:220.56 Kbytes
功能:Small Signal MOSFET Transistor
型号:2N7002_09
大小:173.26 Kbytes
厂商:WEITRON[Weitron Technology]
大小:304.37 Kbytes
功能:Small Signal MOSFET
型号:2N7002_10
大小:92.25 Kbytes