型号:  APT1201R4BLLG

功能描述:  MOSFET N-CH 1200V 9A TO247

制造商:  Microchip Technology

Series:  POWER MOS 7®

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  1200 V

Current - Continuous Drain (Id) @ 25°C:  9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  1.4Ohm @ 4.5A, 10V

Vgs(th) (Max) @ Id:  5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  120 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  2500 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  300W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247

Package / Case:  TO-247-3