型号:  BSC0302LSATMA1

功能描述:  MOSFET N-CH 120V 12A/99A TDSON

制造商:  Infineon Technologies

Series:  OptiMOS™ 2

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  120 V

Current - Continuous Drain (Id) @ 25°C:  12A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:  2.4V @ 112µA

Gate Charge (Qg) (Max) @ Vgs:  79 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  7400 pF @ 60 V

FET Feature:  -

Power Dissipation (Max):  156W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TDSON-8-7

Package / Case:  8-PowerTDFN