型号:  C3M0350120J

功能描述:  SICFET N-CH 1200V 7.2A TO263-7

制造商:  Cree/Wolfspeed

Series:  C3M™

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  1200 V

Current - Continuous Drain (Id) @ 25°C:  7.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  455mOhm @ 3.6A, 15V

Vgs(th) (Max) @ Id:  3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  13 nC @ 15 V

Vgs (Max):  +15V, -4V

Input Capacitance (Ciss) (Max) @ Vds:  345 pF @ 1000 V

FET Feature:  -

Power Dissipation (Max):  40.8W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-263-7

Package / Case:  TO-263-8, D²Pak (7 Leads + Tab), TO-263CA