型号:  CP406-CWDM3011N-CT

功能描述:  MOSFET N-CH 11A 30V BARE DIE

制造商:  Central Semiconductor Corp

Series:  -

Package:  Tray

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  9.93A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  13mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:  3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  -

Power Dissipation (Max):  1.15W (Ta)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  Die

Package / Case:  Die