型号:  D1251S45T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  E-EUPEC-0

封装：  Tray

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  GTO - Freewheeling Diodes

Housing：  Disc dia 76mm height 14mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  18000.0

rT [mΩ] (@Tvj max) max：  0.45

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.25

∫I2dt [A²s · 103] (@10ms, Tvj max)：  1620.0

IFAVM/TC [A/°C] (@180° el sin)：  1310/85

RthJC [K/kW] (@180° el sin) max：  14.0

RthJC [K/kW] (@180° el sin) max：  14.0

VRRM max：  4500.0V

rT [mΩ] (@Tvj max) max：  0.45

Clamping force [kn] min max：  15.0 36.0

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.25

∫I2dt [A²s · 103] (@10ms, Tvj max)：  1620.0

IFSM [A] (@10ms, Tvj max)：  18000.0

I(FSM) max：  18000.0A

IFAVM/TC [A/°C] (@180° el sin)：  1310/85

I(FSM) max：  18000.0 A

VRRM [V]：  4500.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

VRRM max：  4500.0 V

Clamping force [kn] min max：  15.0 36.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  800.0

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  800.0

无铅情况/RoHs：  无铅/符合RoHs