型号:  D1461S45T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D10026K-1

封装：  Tray

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  GTO - Freewheeling Diodes

Housing：  Disc dia 100mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  28000.0

rT [mΩ] (@Tvj max) max：  0.38

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.43

∫I2dt [A²s · 103] (@10ms, Tvj max)：  5120.0

IFAVM/TC [A/°C] (@180° el sin)：  1460/85

RthJC [K/kW] (@180° el sin) max：  12.5

RthJC [K/kW] (@180° el sin) max：  12.5

VRRM max：  4500.0V

rT [mΩ] (@Tvj max) max：  0.38

Clamping force [kn] min max：  27.0 45.0

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.43

∫I2dt [A²s · 103] (@10ms, Tvj max)：  5120.0

IFSM [A] (@10ms, Tvj max)：  28000.0

I(FSM) max：  28000.0A

IFAVM/TC [A/°C] (@180° el sin)：  1460/85

I(FSM) max：  28000.0 A

VRRM [V]：  4500.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

VRRM max：  4500.0 V

Clamping force [kn] min max：  27.0 45.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  840.0

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  840.0

无铅情况/RoHs：  无铅/符合RoHs