型号:  D1961SH45T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D12026K-1

封装：  Tray

MXHTS：  85411001

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  IGCT/IGBT - Freewheeling Diodes

Housing：  Disc Dia 120mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  40000.0

rT [mΩ] (@Tvj max) max：  0.5

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.25

∫I2dt [A²s · 103] (@10ms, Tvj max)：  8000.0

IFAVM/TC [A/°C] (@180° el sin)：  1830/85

VRRM max：  4500.0V

rT [mΩ] (@Tvj max) max：  0.5

Clamping force [kn] min max：  36.0 52.0

VR(D) [kV] (@TC = 25°)：  2.8

Tvj [°C] max：  140.0

VT0 [V] (@Tvj max) max：  1.25

∫I2dt [A²s · 103] (@10ms, Tvj max)：  8000.0

IFSM [A] (@10ms, Tvj max)：  40000.0

I(FSM) max：  40000.0A

IFAVM/TC [A/°C] (@180° el sin)：  1830/85

I(FSM) max：  40000.0 A

VRRM [V]：  4500.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

VRRM max：  4500.0 V

Clamping force [kn] min max：  36.0 52.0

VF/IF [V/kA] (@Tvj max)：  2.5/2.5

IRM [A] (@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max：  2250.0

IRM [A] (@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max：  2250.0

RthJC [K/kW] (@DC) max：  7.5

VR(D) [kV] (@TC = 25°)：  2.8

RthJC [K/kW] (@DC) max：  7.5

Qr [mAs] (@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max：  12.0

Qr [mAs] (@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max：  12.0

无铅情况/RoHs：  无铅/符合RoHs