型号:  D291S45T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D5826K-1

封装：  Tray

MXHTS：  85411001

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Fast Rectifier Diodes

Housing：  Disc dia 58mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  4500.0

rT [mΩ] (@Tvj max) max：  1.76

Tvj [°C] max：  125.0

VT0 [V] (@Tvj max) max：  1.9

∫I2dt [A²s · 103] (@10ms, Tvj max)：  100.0

IFAVM/TC [A/°C] (@180° el sin)：  290/85

RthJC [K/kW] (@180° el sin) max：  40.0

RthJC [K/kW] (@180° el sin) max：  40.0

VRRM max：  4500.0V

rT [mΩ] (@Tvj max) max：  1.76

Clamping force [kn] min max：  9.0 13.0

Tvj [°C] max：  125.0

IFAVM/Tc：  290/85 (180 ° el sin)

VT0 [V] (@Tvj max) max：  1.9

∫I2dt [A²s · 103] (@10ms, Tvj max)：  100.0

IFSM [A] (@10ms, Tvj max)：  4500.0

I(FSM) max：  4500.0A

IFAVM/TC [A/°C] (@180° el sin)：  290/85

I(FSM) max：  4500.0 A

VRRM [V]：  4500.0

VF/IF [V/kA] (@Tvj max)：  4.15/1.2

VRRM max：  4500.0 V

Clamping force [kn] min max：  9.0 13.0

VF/IF [V/kA] (@Tvj max)：  4.15/1.2

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  500.0

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  500.0

无铅情况/RoHs：  无铅/符合RoHs