型号:  D5810N02T VF

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T7526K-1

封装：  Tray

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Rectifier Diodes

Housing：  Disc dia 75mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  70000.0

rT [mΩ] (@Tvj max) max：  0.04

Tvj [°C] max：  180.0

VT0 [V] (@Tvj max) max：  0.7

∫I2dt [A²s · 103] (@10ms, Tvj max)：  24500.0

IFAVM/TC [A/°C] (@180° el sin)：  5800/58

RthJC [K/kW] (@180° el sin) max：  17.0

RthJC [K/kW] (@180° el sin) max：  17.0

VRRM max：  200.0V

rT [mΩ] (@Tvj max) max：  0.04

Clamping force [kn] min max：  30.0 60.0

Tvj [°C] max：  180.0

IFAVM/Tc：  5800/58 (180 ° el sin)

VT0 [V] (@Tvj max) max：  0.7

∫I2dt [A²s · 103] (@10ms, Tvj max)：  24500.0

IFSM [A] (@10ms, Tvj max)：  70000.0

I(FSM) max：  70000.0A

IFAVM/TC [A/°C] (@180° el sin)：  5800/58

I(FSM) max：  70000.0 A

VRRM [V]：  200.0

VF/IF [V/kA] (@Tvj max)：  1.47/18.0

VRRM max：  200.0 V

Clamping force [kn] min max：  30.0 60.0

VF/IF [V/kA] (@Tvj max)：  1.47/18.0

无铅情况/RoHs：  无铅/符合RoHs