型号:  D650S14T QR

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D5726K-1

RoHS：  Y

系列：  D650S

封装：  Tray

MXHTS：  85411001

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Fast Rectifier Diodes

Housing：  Disc dia 58mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  10100.0

rT [mΩ] (@Tvj max) max：  0.45

Tvj [°C] max：  150.0

VT0 [V] (@Tvj max) max：  1.0

∫I2dt [A²s · 103] (@10ms, Tvj max)：  510.0

IFAVM/TC [A/°C] (@180° el sin)：  650/96

RthJC [K/kW] (@180° el sin) max：  48.0

RthJC [K/kW] (@180° el sin) max：  48.0

VRRM max：  1400.0V

rT [mΩ] (@Tvj max) max：  0.45

Clamping force [kn] min max：  6.0 14.5

Tvj [°C] max：  150.0

IFAVM/Tc：  650/96 (180 ° el sin)

VT0 [V] (@Tvj max) max：  1.0

∫I2dt [A²s · 103] (@10ms, Tvj max)：  510.0

IFSM [A] (@10ms, Tvj max)：  10100.0

I(FSM) max：  10100.0A

IFAVM/TC [A/°C] (@180° el sin)：  650/96

I(FSM) max：  10100.0 A

VRRM [V]：  1400.0

VF/IF [V/kA] (@Tvj max)：  2.25/2.7

VRRM max：  1400.0 V

Clamping force [kn] min max：  6.0 14.5

VF/IF [V/kA] (@Tvj max)：  2.25/2.7

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  122.0

IRM [A] (@IF = IFAVM, di/dt = 50 A/µs) max：  122.0

无铅情况/RoHs：  无铅/符合RoHs