型号:  D850N30T

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-D5726K-1

RoHS：  Y

封装：  Tray

MXHTS：  85411001

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Rectifier Diodes

Housing：  Disc dia 58mm height 26mm / Ceramic

IFSM [A] (@10ms, Tvj max)：  12800.0

rT [mΩ] (@Tvj max) max：  0.49

Tvj [°C] max：  160.0

VT0 [V] (@Tvj max) max：  0.84

∫I2dt [A²s · 103] (@10ms, Tvj max)：  819.0

IFAVM/TC [A/°C] (@180° el sin)：  850/100

RthJC [K/kW] (@180° el sin) max：  38.0

RthJC [K/kW] (@180° el sin) max：  38.0

VRRM max：  3000.0V

rT [mΩ] (@Tvj max) max：  0.49

Clamping force [kn] min max：  10.0 24.0

Tvj [°C] max：  160.0

IFAVM/Tc：  850/100 (180 ° el sin)

VT0 [V] (@Tvj max) max：  0.84

∫I2dt [A²s · 103] (@10ms, Tvj max)：  819.0

IFSM [A] (@10ms, Tvj max)：  12800.0

I(FSM) max：  12800.0A

IFAVM/TC [A/°C] (@180° el sin)：  850/100

I(FSM) max：  12800.0 A

VRRM [V]：  3000.0

VF/IF [V/kA] (@Tvj max)：  2.62/3.5

VRRM max：  3000.0 V

Clamping force [kn] min max：  10.0 24.0

VF/IF [V/kA] (@Tvj max)：  2.62/3.5

无铅情况/RoHs：  无铅/符合RoHs