型号:  FF6MR12KM1PHOSA1

功能描述:  MEDIUM POWER 62MM

制造商:  Infineon Technologies

Series:  CoolSiC™

Package:  Tray

FET Type:  2 N-Channel (Half Bridge)

FET Feature:  Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):  1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:  250A (Tc)

Rds On (Max) @ Id, Vgs:  5.81mOhm @ 250A, 15V

Vgs(th) (Max) @ Id:  5.15V @ 80mA

Gate Charge (Qg) (Max) @ Vgs:  496nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds:  14700pF @ 800V

Power - Max:  -

Operating Temperature:  -40°C ~ 150°C (TJ)

Mounting Type:  Chassis Mount

Package / Case:  Module

Supplier Device Package:  AG-62MM