型号:  G3R350MT12D

功能描述:  SIC MOSFET N-CH 11A TO247-3

制造商:  GeneSiC Semiconductor

Series:  G3R™

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  1200 V

Current - Continuous Drain (Id) @ 25°C:  11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  420mOhm @ 4A, 15V

Vgs(th) (Max) @ Id:  2.69V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:  12 nC @ 15 V

Vgs (Max):  ±15V

Input Capacitance (Ciss) (Max) @ Vds:  334 pF @ 800 V

FET Feature:  -

Power Dissipation (Max):  74W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-3

Package / Case:  TO-247-3