型号:  G6N02L

功能描述:  MOSFET N-CH 20V 6A SOT-23-3L

制造商:  Goford Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  20 V

Current - Continuous Drain (Id) @ 25°C:  6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  2.5V, 4.5V

Rds On (Max) @ Id, Vgs:  11.3mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:  0.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  12.5 nC @ 10 V

Vgs (Max):  ±12V

Input Capacitance (Ciss) (Max) @ Vds:  1140 pF @ 10 V

FET Feature:  Standard

Power Dissipation (Max):  1.8W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  SOT-23-3

Package / Case:  TO-236-3, SC-59, SOT-23-3