型号:  GT30J341,Q

功能描述:  IGBT TRANS 600V 30A TO3PN

制造商:  Toshiba Semiconductor and Storage

Series:  -

Package:  Tray

IGBT Type:  -

Voltage - Collector Emitter Breakdown (Max):  600 V

Current - Collector (Ic) (Max):  59 A

Current - Collector Pulsed (Icm):  120 A

Vce(on) (Max) @ Vge, Ic:  2V @ 15V, 30A

Power - Max:  230 W

Switching Energy:  800µJ (on), 600µJ (off)

Input Type:  Standard

Gate Charge:  -

Td (on/off) @ 25°C:  80ns/280ns

Test Condition:  300V, 30A, 24Ohm, 15V

Reverse Recovery Time (trr):  50 ns

Operating Temperature:  175°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-3P-3, SC-65-3

Supplier Device Package:  TO-3P(N)