型号:  HAT2218R-EL-E

功能描述:  POWER, 7.5A, 30V, N-CH MOSFET

制造商:  Renesas Electronics America Inc

Series:  -

Package:  Bulk

FET Type:  2 N-Channel (Dual) Asymmetrical

FET Feature:  Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):  30V

Current - Continuous Drain (Id) @ 25°C:  7.5A, 8A

Rds On (Max) @ Id, Vgs:  24mOhm @ 3.75A, 10V

Vgs(th) (Max) @ Id:  -

Gate Charge (Qg) (Max) @ Vgs:  4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:  630pF @ 10V

Power - Max:  1.5W

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Package / Case:  8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:  8-SOP