型号:  IGC19T65QE

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  --

Packing Type：  WAFER SAWN

VDS max：  650.0V

Technology：  IGBT HighSpeed 3

Operating Temperature min max：  -40.0 °C 175.0 °C

VGE(th) min max：  4.2 V 5.6 V

VCE(sat) max：  2.32 V

IC max：  40.0A

RoHS compliant：  yes

Packing Type：  WAFER SAWN

VDS max：  650.0V

Technology：  IGBT HighSpeed 3

Operating Temperature min max：  -40.0 °C 175.0 °C

VCE max：  650.0 V

VDS max：  650.0 V

Operating Temperature min max：  -40.0°C 175.0°C

VGE(th) min max：  4.2 V 5.6 V

VCE(sat) max：  2.32 V

VCE max：  650.0V

VCE(sat) max：  2.32V

IC max：  40.0A

VGE(th) min max：  4.2V 5.6V

IC max：  40.0 A

无铅情况/RoHs：  无铅/符合RoHs