型号: IMBG120R140M1HXTMA1
功能描述: TRANS SJT N-CH 1.2KV 18A TO263
制造商: Infineon Technologies
Series: CoolSiC™
Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1.2 kV
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Vgs (Max): +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
FET Feature: Standard
Power Dissipation (Max): 107W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
联系人:林炜东,林俊源
联系人:胡小姐
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联系人:李先生
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联系人:王小姐,刘先生
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