型号:  IPB80P03P4L04ATMA2

功能描述:  MOSFET P-CH 30V 80A TO263-3

制造商:  Infineon Technologies

Series:  Automotive, AEC-Q101, OptiMOS®-P2

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:  2V @ 253µA

Gate Charge (Qg) (Max) @ Vgs:  160 nC @ 10 V

Vgs (Max):  +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:  11300 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  137W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TO263-3-2

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB