型号:  IPD80R1K0CE

功能描述:  

制造商:  Infineon Technologies

封装形式Package：  DPAK

极性Polarity：  N-CH

漏源极击穿电压VDSS：  800V

连续漏极电流ID：  5.7A

安装风格：  SMD/SMT

封装/外壳：  TO-252-3

通道数量：  1Channel

晶体管极性：  N-Channel

Vds-漏源极击穿电压：  800V

Id-连续漏极电流：  5.7A

Rds On-漏源导通电阻：  800mOhms

Vgs th-栅源极阈值电压：  2.1V

Vgs - 栅极-源极电压：  20V

Qg-栅极电荷：  31nC

最小工作温度：  -55C

最大工作温度：  +150C

配置：  Single

Pd-功率耗散：  83W

通道模式：  Enhancement

高度：  2.3mm

长度：  6.5mm

系列：  CoolMOSCE

晶体管类型：  1N-Channel

宽度：  6.22mm

下降时间：  8ns

上升时间：  15ns

典型关闭延迟时间：  72ns

典型接通延迟时间：  25ns

Packing Type：  TAPE & REEL

Moisture Level：  1

RDS (on) max：  950.0mΩ

IDpuls max：  18.0A

VDS max：  800.0V

ID max：  5.7 A

RthJC max：  1.5 K/W

QG (typ @10V)：  31.0 nC

Package：  DPAK (TO-252)

Rth：  1.5K/W

QG：  31.0 nC

ID (@25°C) max：  5.7 A

Budgetary Price €€/1k：  0.49

Operating Temperature min：  -55.0°C

Ptot max：  83.0W

Ptot max：  83.0 W

Polarity：  N

IDpuls max：  18.0 A

VDS max：  800.0 V

Operating Temperature min：  -55.0 °C

RDS (on) (@10V) max：  950.0 mΩ

Pin Count：  3.0 Pins

RthJA max：  62.0K/W

VGS(th) min max：  2.1 V 3.9 V

Mounting：  SMT

RthJC max：  1.5K/W

RthJA max：  62.0 K/W

Special Features：  price/performance

VGS(th) min max：  2.1V 3.9V

RDS (on) max：  950.0 mΩ

无铅情况/RoHs：  否