型号:  IPP082N10NF2SAKMA1

功能描述:  TRENCH >=100V

制造商:  Infineon Technologies

Series:  StrongIRFET™ 2

Package:  -

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  15A (Ta), 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  6V, 10V

Rds On (Max) @ Id, Vgs:  8.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:  3.8V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:  42 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  2000 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  3.8W (Ta), 100W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  PG-TO220-3

Package / Case:  TO-220-3