型号:  IPP65R190CFD7XKSA1

功能描述:  HIGH POWER_NEW

制造商:  Infineon Technologies

Series:  CoolMOS™ CFD7

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:  4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:  68 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  1850 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  151W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  PG-TO220-3

Package / Case:  TO-220-3