型号:  IPT030N12N3GATMA1

功能描述:  TRENCH >=100V

制造商:  Infineon Technologies

Series:  OptiMOS™

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  120 V

Current - Continuous Drain (Id) @ 25°C:  24A (Ta), 237A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:  4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:  198 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  13000 pF @ 60 V

FET Feature:  -

Power Dissipation (Max):  3.8W (Ta), 375W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-HSOF-8

Package / Case:  8-PowerSFN