型号:  IPU60R3K4CEAKMA1

功能描述:  MOSFET N-CH 600V 2.6A TO251-3

制造商:  Infineon Technologies

Series:  CoolMOS™ CE

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  3.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:  3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:  4.6 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  93 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  29W (Tc)

Operating Temperature:  -40°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  PG-TO251-3

Package / Case:  TO-251-3 Short Leads, IPak, TO-251AA