型号:  IPW65R041CFDFKSA2

功能描述:  MOSFET N-CH 650V 68.5A TO247-3

制造商:  Infineon Technologies

Series:  CoolMOS™ CFD2

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  68.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  41mOhm @ 33.1A, 10V

Vgs(th) (Max) @ Id:  4.5V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:  300 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  8400 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  500W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  PG-TO247-3

Package / Case:  TO-247-3