型号:  IQE006NE2LM5CGATMA1

功能描述:  MOSFET N-CH 25V 41A/298A IPAK

制造商:  Infineon Technologies

Series:  OptiMOS™ 5

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  25 V

Current - Continuous Drain (Id) @ 25°C:  41A (Ta), 298A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  650mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:  2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  82.1 nC @ 10 V

Vgs (Max):  ±16V

Input Capacitance (Ciss) (Max) @ Vds:  5453 pF @ 12 V

FET Feature:  -

Power Dissipation (Max):  2.1W (Ta), 89W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  IPAK (TO-251AA)

Package / Case:  TO-251-3 Short Leads, IPak, TO-251AA