型号:  IRF614BFP001

功能描述:  MOSFET N-CH 250V 2.8A TO220F-3

制造商:  Fairchild Semiconductor

Series:  -

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  250 V

Current - Continuous Drain (Id) @ 25°C:  2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  2Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  10.5 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  275 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  40W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-220F-3

Package / Case:  TO-220-3 Full Pack