型号:  IRF7807TR

功能描述:  MOSFET N-CH 30V 8.3A 8SO

制造商:  Infineon Technologies

Series:  HEXFET®

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V

Rds On (Max) @ Id, Vgs:  25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:  1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  17 nC @ 5 V

Vgs (Max):  ±12V

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  -

Power Dissipation (Max):  2.5W (Ta)

Operating Temperature:  -

Mounting Type:  Surface Mount

Supplier Device Package:  8-SO

Package / Case:  8-SOIC (0.154", 3.90mm Width)