型号:  IRFC120NB

功能描述:  MOSFET 100V 9.4A DIE

制造商:  Infineon Technologies

Series:  HEXFET®

Package:  Bulk

FET Type:  -

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  9.4A

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  210mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:  -

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  -

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  -

Power Dissipation (Max):  -

Operating Temperature:  -

Mounting Type:  Surface Mount

Supplier Device Package:  Die

Package / Case:  Die