型号:  IRFC4229EB

功能描述:  MOSFET N-CH 250V 46A DIE

制造商:  Infineon Technologies

Series:  HEXFET®

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  250 V

Current - Continuous Drain (Id) @ 25°C:  46A

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  -

Vgs(th) (Max) @ Id:  -

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  -

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  -

Power Dissipation (Max):  -

Operating Temperature:  -

Mounting Type:  Surface Mount

Supplier Device Package:  Die

Package / Case:  Die