型号: IS61WV12824-8BI
功能描述: IC SRAM 3MBIT PARALLEL 119PBGA
制造商: ISSI, Integrated Silicon Solution Inc
Series: -
Package: Tray
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 3Mb (128K x 24)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BBGA
Supplier Device Package: 119-PBGA (14x22)
联系人:叶小姐
电话:15818661396
联系人:朱丽娜
电话:15989349634
联系人:张先生
电话:17602007745
联系人:陈先生
电话:13823793399
Q Q:
联系人:李先生
电话:18822854608
联系人:柯小姐
电话:13510157626
联系人:李小姐
电话:15302619915
联系人:陆飞霖
电话:18574807775
Q Q:
联系人:段林洋
电话:18673559111
联系人:朱先生
电话:13532530515