型号:  ISC017N04NM5ATMA1

功能描述:  MOSFET N-CH 40V 193A TDSON-8

制造商:  Infineon Technologies

Series:  OptiMOS™5

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  31A (Ta), 193A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  7V, 10V

Rds On (Max) @ Id, Vgs:  1.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:  3.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:  67 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  4800 pF @ 20 V

FET Feature:  -

Power Dissipation (Max):  3W (Ta), 115W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TDSON-8 FL

Package / Case:  8-PowerTDFN