型号:  MMDT5451

功能描述:  双极晶体管 - 双极结型晶体管(BJT)

制造商:  Diodes Incorporated

制造商:  Diodes Incorporated

产品种类:  双极晶体管 - 双极结型晶体管(BJT)

配置:  Dual

晶体管极性:  NPN, PNP

集电极—基极电压 VCBO:  180 V at NPN, 160 V at PNP

集电极—发射极最大电压 VCEO:  160 V at NPN, 150 V at PNP

发射极 - 基极电压 VEBO:  6 V at NPN, 5 V at PNP

最大直流电集电极电流:  0.2 A

增益带宽产品fT:  300 MHz

最大工作温度:  + 150 C

安装风格:  SMD/SMT

封装 / 箱体:  SOT-363-6

商标:  Diodes Incorporated

直流集电极/Base Gain hfe Min:  80 at 1 mA at 5 V at NPN, 80 at 10 mA at 5 V at NPN, 30 at 50 mA at 5 V at NPN, 50 at 1 mA at 5 V at PNP, 60 at 10 mA at 5 V at PNP, 50 at 50 mA at 5 V at PNP

最小工作温度:  - 55 C

Pd-功率耗散:  200 mW

系列:  MMDT5451