型号:  MSC025SMA120B4

功能描述:  TRANS SJT N-CH 1200V 103A TO247

制造商:  Microchip Technology

Series:  -

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  1200 V

Current - Continuous Drain (Id) @ 25°C:  103A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  20V

Rds On (Max) @ Id, Vgs:  31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:  2.8V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:  232 nC @ 20 V

Vgs (Max):  +23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:  3020 pF @ 1000 V

FET Feature:  -

Power Dissipation (Max):  500W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-4

Package / Case:  TO-247-4