型号:  NTBGS001N06C

功能描述:  POWER MOSFET, 60 V, 1.1 M?, 342

制造商:  ON Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  60 V

Current - Continuous Drain (Id) @ 25°C:  42A (Ta), 342A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V, 12V

Rds On (Max) @ Id, Vgs:  1.1mOhm @ 112A, 12V

Vgs(th) (Max) @ Id:  4V @ 562µA

Gate Charge (Qg) (Max) @ Vgs:  139 nC @ 30 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  11110 pF @ 30 V

FET Feature:  -

Power Dissipation (Max):  3.7W (Ta), 245W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  D2PAK (TO-263)

Package / Case:  -