型号:  NTE108-1

功能描述:  Transistor, Bipolar,Si,NPN,Amplifier, High Frequency,VCEO 15V,IC 50mA,PD 625mW

制造商:  NTE Electronics, Inc.

Collector Current:  50 mA

Collector to Base Voltage:  30 V

Collector to Emitter Voltage:  15 V

Configuration:  Common Base

Diameter:  5.28 mm

Dimensions:  5.28 Dia. x 4.57 H mm

Emitter to Base Voltage:  3 V

Height:  0.18" (4.57mm)

Material:  Si

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Through Hole

Number of Elements per Chip:  1

Number of Pins:  3

Operating Frequency:  600 MHz

Package Type:  TO-106

Polarity:  NPN

Power Dissipation:  625 mW

Primary Type:  Si

Product Header:  Silicon NPN Transistor

Resistance, Thermal, Junction to Case:  83.3 °C/W

Series:  Transistor Series

Temperature Operating Range:  -55 to +150 °C

Transistor Type:  NPN

Type:  Amplifier, High Frequency

UPC Code:  768249010012

Voltage, Breakdown, Collector to Emitter:  15 V

Voltage, Collector to Emitter, Saturation:  0.4 V

Voltage, Saturation, Base to Emitter:  1 V