型号:  NTE159

功能描述:  Transistor, Bipolar,Si,PNP,Audio Amplifier, Switch,VCEO 80V,IC 800mA,PD 625mW

制造商:  NTE Electronics, Inc.

Collector Current:  800 mA

Collector to Base Voltage:  80 V

Collector to Emitter Voltage:  80 V

Configuration:  Common Base

Continuous Collector Current:  1 A

Device Dissipation:  0.625 W

Dimensions:  5.2 x 4.2 x 5.33 mm

Emitter to Base Voltage:  5 V

Height:  0.21" (5.33mm)

Junction to Ambient Thermal Resistance:  200 °C⁄W

Length:  0.204" (5.2mm)

Material:  Si

Material Type:  Silicon

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Through Hole

Number of Elements per Chip:  1

Number of Pins:  3

Operating Frequency:  100 MHz

Package Type:  TO-92

Polarity:  PNP

Power Dissipation:  625 mW

Primary Type:  Si

Product Header:  Silicon PNP Transistor

Resistance, Thermal, Junction to Case:  83.3 °C/W

Series:  Transistor Series

Temperature Operating Range:  -55 to +150 °C

Temperature Range, Junction, Operating:  -55 to +150 C

Transistor Polarity:  PNP

Transistor Type:  PNP

Type:  Audio Amplifier, Switch

UPC Code:  768249058717

Voltage, Breakdown, Collector to Emitter:  80 V

Voltage, Collector to Emitter, Saturation:  0.15 V

Voltage, Saturation, Base to Emitter:  1.1 V

Voltage, Saturation, Collector to Emitter:  1.5 V

Width:  0.165" (4.2mm)