型号:  NTE252

功能描述:  Transistor, Darlington,Si,PNP,Amplifier, Power,Vo 100V,VI 5V,Io 20A,PD 160W

制造商:  NTE Electronics, Inc.

Collector Current:  20 A

Collector to Base Voltage:  100 V

Collector to Emitter Voltage:  100 V

Configuration:  Common Base

Diameter:  22.2 mm

Dimensions:  22.2 Dia. x 8.89 H mm

Emitter to Base Voltage:  5 V

Height:  0.35" (8.89mm)

Input Voltage:  5 V

Material:  Si

Maximum Operating Temperature:  +200 °C

Minimum Operating Temperature:  -65 °C

Mounting Type:  Through Hole

Number of Elements per Chip:  2

Number of Pins:  3

Output Current:  20 A

Output Voltage:  100 V

Package Type:  TO-3

Polarity:  PNP

Power Dissipation:  160 W

Primary Type:  Si

Product Header:  Complementary Darlington Silicon Transistor

Resistance, Thermal, Junction to Case:  1.09 °C⁄W

Series:  Transistor Series

Temperature Operating Range:  -65 to +200 °C

Temperature Range, Junction, Operating:  -65 to 200 C

Transistor Polarity:  PNP

Transistor Type:  PNP

Type:  Amplifier, Power

UPC Code:  768249118619

Voltage, Collector to Emitter, Saturation:  3 V

Voltage, Saturation, Base to Emitter:  4 V

Voltage, Saturation, Collector to Emitter:  2 V