型号:  NTE2932

功能描述:  MOSFET N-CH 200V 21.3A TO3PML

制造商:  NTE Electronics, Inc

Series:  -

Package:  Bag

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  200 V

Current - Continuous Drain (Id) @ 25°C:  21.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  85mOhm @ 10.65A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  123 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  3000 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  90W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-3PML

Package / Case:  TO-3P-3 Full Pack