型号:  NTE367

功能描述:  Transistor Npn Silicon 36v Ic=8a Po=45w 407-512 Mhz Rf Power Output

制造商:  NTE Electronics

Case/Package:  1.5 °C/W

Mounting:  Screw

Operating Temperature:  -65 to 150 °C

Type:  NPN 1000

Maximum Transition Frequency:  512 MHz

Material:  Si

Minimum DC Current Gain Range:  2 to 30

Number of Elements per Chip:  1

Configuration:  Single Dual Emitter

Maximum Collector Base Voltage:  36 V

Maximum DC Collector Current Range:  8 to 100 A

Maximum Collector Emitter Voltage Range:  

Maximum Emitter Base Voltage:  4 V

Output Power:  45 W

Typical Power Gain:  5.4 dB

Maximum DC Collector Current:  9 A

Pin_Count:  6

Dimension:  24.78 x 12.7 x 6.85 mm

Minimum DC Current Gain:  20@4A@5 V

Typical Output Capacitance:  90 pF

Operational Bias Conditions:  12.5 V

Maximum Power Dissipation:  117000 mW

Maximum Collector Emitter Voltage:  16 V