型号:  NTE464

功能描述:  MOSFET-P CHANNEL AMP/SW

制造商:  NTE Electronics, Inc

Series:  -

Package:  Bag

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  25 V

Current - Continuous Drain (Id) @ 25°C:  10A

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  600Ohm @ 0A, 10V

Vgs(th) (Max) @ Id:  5V @ 10A

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  5 pF @ 10 V

FET Feature:  Standard

Power Dissipation (Max):  800mW (Tc)

Operating Temperature:  175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-72

Package / Case:  TO-72-3