型号:  NTP067N65S3H

功能描述:  POWER MOSFET, N-CHANNEL, SUPERFE

制造商:  ON Semiconductor

Series:  SuperFET® III

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  67mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:  4V @ 3.9mA

Gate Charge (Qg) (Max) @ Vgs:  80 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  3750 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  266W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-220-3

Package / Case:  TO-220-3